Properties of isolation liner and electrical characteristics of high aspect ratio TSV in 3D stacking technology

التفاصيل البيبلوغرافية
العنوان: Properties of isolation liner and electrical characteristics of high aspect ratio TSV in 3D stacking technology
المؤلفون: null DeokYoung Jung, null Kwang-Jin Moon, null Byung-Lyul Park, null Gilheyun Choi, null Ho-Kyu Kang, null Chilhee Chung, null Deok Young Jung, null Yonghan Rho
المصدر: 2012 SEMI Advanced Semiconductor Manufacturing Conference.
بيانات النشر: IEEE, 2012.
سنة النشر: 2012
مصطلحات موضوعية: Materials science, Through-silicon via, business.industry, Stacking, Electrical engineering, Three-dimensional integrated circuit, Hardware_PERFORMANCEANDRELIABILITY, Form factor (design), Semiconductor, Hardware_INTEGRATEDCIRCUITS, Bandwidth (computing), Optoelectronics, Isolation (database systems), business, Mobile device
الوصف: As semiconductor performance improvements through device scale-down becomes more difficult, 3D chip stacking technology with TSVs (Through Silicon Via) is becoming an increasingly attractive solution to achieve higher system performances by way of higher bandwidth, smaller form factor and lower power consumption. Such increase in performance using TSV aided 3D chip stacking technology applies not only to homogenous chip stacking but to heterogeneous chip stacking (e.g. memory device on logic) as well, making it ideal for such applications in high performance mobile devices.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c6dac8005e60054c27102f0e5b3e24b9
https://doi.org/10.1109/asmc.2012.6212888
رقم الأكسشن: edsair.doi...........c6dac8005e60054c27102f0e5b3e24b9
قاعدة البيانات: OpenAIRE