WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

التفاصيل البيبلوغرافية
العنوان: WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application
المؤلفون: Chia Chieh Hsu, Chao-Hsin Chien, Edward Yi Chang, Jing Neng Yao, Jin Hwa Lee, Yueh Chin Lin, Kuan Ning Huang, Chieh Ying Wu
المصدر: Microelectronic Engineering. :111366
بيانات النشر: Elsevier BV, 2020.
سنة النشر: 2020
مصطلحات موضوعية: Materials science, Withdrawn Study, business.industry, Optoelectronics, Power application, Algan gan, Electrical and Electronic Engineering, Condensed Matter Physics, business, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
الوصف: This article has been withdrawn at the request of the author(s) and published in Micro and Nano Engineering. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at https://www.elsevier.com/about/our-business/policies/article-withdrawal
تدمد: 0167-9317
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c72c27d40285c7130a2bd7d8973c72e5
https://doi.org/10.1016/j.mee.2020.111366
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........c72c27d40285c7130a2bd7d8973c72e5
قاعدة البيانات: OpenAIRE