Fabricating organic transistors based on domain-ordered copper phthalocyanine film grown on oligothiophene epitaxial substrate

التفاصيل البيبلوغرافية
العنوان: Fabricating organic transistors based on domain-ordered copper phthalocyanine film grown on oligothiophene epitaxial substrate
المؤلفون: Jianhua Zhang, Zongpeng Zhu, Wen Gu, Yulei Hu, Jun Wang, Na Liu
المصدر: physica status solidi (RRL) - Rapid Research Letters. 7:558-561
بيانات النشر: Wiley, 2013.
سنة النشر: 2013
مصطلحات موضوعية: Diffraction, Materials science, business.industry, Atomic force microscopy, Transistor, Substrate (electronics), Condensed Matter Physics, Epitaxy, Active layer, law.invention, law, Copper phthalocyanine, Optoelectronics, General Materials Science, Thin film, business
الوصف: Organic field-effect transistors were fabricated using a domain-ordered copper phthalocyanine (CuPc) thin film as the active layer prepared by weak epitaxial growth (WEG) technology. CuPc was deposited onto α-sexithiophene (α-6T) and α,ω-dihexylsexithiophene (α,ω-DH6T) films acting as the epitaxial substrate to realize the domain-order growth. As a result, the thin-film morphology of CuPc exhibits many re- gional domain-ordered structures measured by atomic force microscopy and X-ray diffraction. The field-effect mobilities are 0.11 and 0.085 cm2/Vs for the devices with CuPc/α-6T and CuPc/α,ω-DH6T, respectively. The threshold voltages were –7 V and –13 V for CuPc/α-6T and CuPc/α,ω-DH6T, respectively. The improved device performance could be attributed to the domain-order structure of the CuPc thin film. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
تدمد: 1862-6254
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c90abf282ee0933eb923121fab86f9de
https://doi.org/10.1002/pssr.201307206
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........c90abf282ee0933eb923121fab86f9de
قاعدة البيانات: OpenAIRE