Physics based modeling of bimodal electromigration failure distributions and variation analysis for VLSI interconnects

التفاصيل البيبلوغرافية
العنوان: Physics based modeling of bimodal electromigration failure distributions and variation analysis for VLSI interconnects
المؤلفون: Francky Catthoor, Mehdi B. Tahoori, Houman Zahedmanesh, Rajendra Bishnoi, Kevin Garello, Kristof Croes, Sarath Mohanachandran Nair, Gouri Sankar Kar
المصدر: IRPS
بيانات النشر: IEEE, 2020.
سنة النشر: 2020
مصطلحات موضوعية: 010302 applied physics, Very-large-scale integration, Computer science, 02 engineering and technology, Variation (game tree), Physics based, 021001 nanoscience & nanotechnology, 01 natural sciences, Electromigration, Finite element method, Reliability engineering, Reliability (semiconductor), Dimension (vector space), 0103 physical sciences, Line (geometry), 0210 nano-technology
الوصف: Electromigration (EM) is a major reliability concern for interconnects in advanced technology nodes. Most of the existing EM models are either empirical or calibrated based on finite element analysis. Most of them consider only EM failures in the line without considering the via. Furthermore, the existing EM models do not model variations in the EM induced failure times, as typically observed in measurements. In this work, we develop a variation-aware EM analysis framework to model the bimodal failure distribution with early failures in via along with late failures in line. This EM model can be used for material and dimension exploration while being able to model and predict the variations in the bimodal EM failure distribution at various operating conditions.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c9f98fa495d953c9bb11d95f2f6f442a
https://doi.org/10.1109/irps45951.2020.9128313
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........c9f98fa495d953c9bb11d95f2f6f442a
قاعدة البيانات: OpenAIRE