Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices
| العنوان: | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices |
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| المؤلفون: | Claudia Bock, Guido Grundmeier, Teresa de los Arcos, Christian Hoppe, Klaus Schierbaum, Ersoy Subaşı, Anjana Devi, Lukas Mai, Detlef Rogalla, Engin Ciftyurek, David Zanders, Wolfram Gilbert |
| المصدر: | ACS Applied Materials & Interfaces. 11:3169-3180 |
| بيانات النشر: | American Chemical Society (ACS), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | chemistry.chemical_classification, Fabrication, Materials science, Transistor, Oxide, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, law.invention, Atomic layer deposition, chemistry.chemical_compound, Chemical engineering, chemistry, Thin-film transistor, law, General Materials Science, Thin film, 0210 nano-technology, Tin, Alkyl |
| الوصف: | A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor devic... |
| تدمد: | 1944-8252 1944-8244 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::cc2888db5c437986d86548880c0a21be https://doi.org/10.1021/acsami.8b16443 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........cc2888db5c437986d86548880c0a21be |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 19448252 19448244 |
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