Electrodeposition of Cu(In,Ga)Se2 Crystals on High-Density CdS Nanowire Arrays for Photovoltaic Applications

التفاصيل البيبلوغرافية
العنوان: Electrodeposition of Cu(In,Ga)Se2 Crystals on High-Density CdS Nanowire Arrays for Photovoltaic Applications
المؤلفون: Yun Mo Sung, Woo Chul Kwak, Tae Geun Kim, Sung-Hwan Han
المصدر: Crystal Growth & Design. 10:5297-5301
بيانات النشر: American Chemical Society (ACS), 2010.
سنة النشر: 2010
مصطلحات موضوعية: business.industry, Chemistry, Energy conversion efficiency, Inorganic chemistry, Photovoltaic system, Nanowire, General Chemistry, Condensed Matter Physics, Tin oxide, Copper indium gallium selenide solar cells, Crystallinity, Optoelectronics, General Materials Science, Thin film, business, Layer (electronics)
الوصف: High-density and single-crystalline CdS nanowires were grown on fluorine-doped tin oxide (FTO)/soda-lime glass substrates using Bi catalysts via the so-called solution−liquid−solid (SLS) mechanism. Through a series of voltage loading steps, high-quality Cu(In,Ga)Se2 (CIGS) light absorption layers were electrochemically deposited on the CdS window layers and subsequently selenized at 400 °C to form photovoltaic cells. Due to the one dimensionality and single crystallinity of the CdS nanowires, the carrier collection efficiency could be improved. The resulting CIGS/CdS nanowire solar cells showed a light energy conversion efficiency of ∼6.18% under AM 1.5 conditions (I = 100 mW/cm2), which is ∼28.7% higher than that of the equivalent CIGS solar cells containing chemically deposited CdS thin film as a window layer.
تدمد: 1528-7505
1528-7483
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cc5db3a7e0b7e8cf4ca15dd4496bee5b
https://doi.org/10.1021/cg101157a
رقم الأكسشن: edsair.doi...........cc5db3a7e0b7e8cf4ca15dd4496bee5b
قاعدة البيانات: OpenAIRE