Historical perspective on radiation effects in III-V devices

التفاصيل البيبلوغرافية
العنوان: Historical perspective on radiation effects in III-V devices
المؤلفون: Todd R. Weatherford, W.T. Anderson
المصدر: IEEE Transactions on Nuclear Science. 50:704-710
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2003.
سنة النشر: 2003
مصطلحات موضوعية: Nuclear and High Energy Physics, Engineering, Silicon, business.industry, Perspective (graphical), chemistry.chemical_element, Semiconductor device, Radiation, Gallium arsenide, chemistry.chemical_compound, Nuclear Energy and Engineering, chemistry, Nuclear electronics, Optoelectronics, Compound semiconductor, Electrical and Electronic Engineering, business
الوصف: A historical review of radiation effects on III-V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III-V radiation effects. The purpose of this paper is to provide present researchers with a summary of discoveries and lessons learned from previous failures and successes.
تدمد: 1558-1578
0018-9499
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ccc5e539072854f5edef548584e2d378
https://doi.org/10.1109/tns.2003.813124
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........ccc5e539072854f5edef548584e2d378
قاعدة البيانات: OpenAIRE