Historical perspective on radiation effects in III-V devices
العنوان: | Historical perspective on radiation effects in III-V devices |
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المؤلفون: | Todd R. Weatherford, W.T. Anderson |
المصدر: | IEEE Transactions on Nuclear Science. 50:704-710 |
بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2003. |
سنة النشر: | 2003 |
مصطلحات موضوعية: | Nuclear and High Energy Physics, Engineering, Silicon, business.industry, Perspective (graphical), chemistry.chemical_element, Semiconductor device, Radiation, Gallium arsenide, chemistry.chemical_compound, Nuclear Energy and Engineering, chemistry, Nuclear electronics, Optoelectronics, Compound semiconductor, Electrical and Electronic Engineering, business |
الوصف: | A historical review of radiation effects on III-V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III-V radiation effects. The purpose of this paper is to provide present researchers with a summary of discoveries and lessons learned from previous failures and successes. |
تدمد: | 1558-1578 0018-9499 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ccc5e539072854f5edef548584e2d378 https://doi.org/10.1109/tns.2003.813124 |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi...........ccc5e539072854f5edef548584e2d378 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 15581578 00189499 |
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