Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer
| العنوان: | Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer |
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| المؤلفون: | Hua-Nan Liang, Na Bai, Lan-Qing Zou, Hua-Jun Sun, Kan-Hao Xue, Wei-Ming Cheng, Hong Lu, Xiang-Shui Miao |
| المصدر: | IEEE Transactions on Electron Devices. 70:83-87 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::cd34f5efb5e1bd2e53a4cf2d167c753d https://doi.org/10.1109/ted.2022.3225123 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........cd34f5efb5e1bd2e53a4cf2d167c753d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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