The Role of High-K Dielectrics in Improving the Performance of Metal-Insulator-Semiconductor Solar Cells
| العنوان: | The Role of High-K Dielectrics in Improving the Performance of Metal-Insulator-Semiconductor Solar Cells |
|---|---|
| المؤلفون: | H. Bencherif, S. Ben Machiche, Fortunato Pezzimenti, Lakhdar Dehimi |
| المصدر: | Silicon. 13:3239-3247 |
| بيانات النشر: | Springer Science and Business Media LLC, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Silicon, business.industry, Energy conversion efficiency, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Amorphous solid, Semiconductor, chemistry, law, 0103 physical sciences, Solar cell, Optoelectronics, Crystalline silicon, 0210 nano-technology, business, Quantum tunnelling, High-κ dielectric |
| الوصف: | This paper assesses the electrical performance of a metal-insulator-semiconductor (MIS) solar cell designed by using different high-k dielectrics. The study is aimed to achieve the optimized device geometrical dimensions while improving the quantum mechanical tunnelling mechanisms. In addition, an overall comparison between the proposed solar cell structures made of crystalline (c-Si) or hydrogenated amorphous (a-Si:H) silicon is presented. In particular, 10-A-thick HfO2 and Al2O3 layers are used as alternative high-k materials to surmount the conventional SiO2 drawbacks. Besides, in order to achieve the highest possible conversion efficiency (n), we have investigated the oxide physical and geometrical parameters effects on the fundamental cell figure of merits. The obtained results indicate that a MIS solar cell involving HfO2 and a c-Si bulk, with cell thickness of 250 μm and an acceptor doping density of NA = 7 × 1015 cm−3, perform the optimized results, namely JSC = 45.06 mA/cm2,VOC = 0.592 V,FF = 81.95%, and η = 21.85%.At the same time, for an a-Si:H-based thin structure with a cell thickness of 2 μm(NA = 7 × 1015 cm−3) we obtained JSC = 16.3 mA/cm2,VOC = 1.025 V, FF = 78.8%,and η = 13.1%. |
| تدمد: | 1876-9918 1876-990X |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::d0d74bc73722eacd0deb38ec64afc270 https://doi.org/10.1007/s12633-020-00660-6 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........d0d74bc73722eacd0deb38ec64afc270 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 18769918 1876990X |
|---|