Trap-related transient characteristics and RTN in p-GaN gate HEMT were characterized, for the first time to our knowledge. Current conduction mechanism in DC IG is explained based on proposed model. Hopping conduction mechanism is responsible for IG at VG 0 seems to be controlled by thermionic emission and affected by the action of floating-base n(W)-p(p-GaN)-n(AlGaN/GaN) bipolar transistor. Transient current behavior is related to the DC conduction mechanism and could be explained by thermal emission and charge trapping in p-GaN and AlGaN layers. Measured transient behavior of gate capacitance corresponds to that of the transient currents. Hole trapping into the AlGaN layer and existence of percolation path in gate and drain currents are verified by analyzing RTNs in IG and ID. Trap position and activation energy regarding RTN are firstly extracted. RTN time constants are similar to those in IG and ID transient behavior.
