The performance of a new 6.5 kV trench IGBT was investigated. The trench technology utilizing the field stop concept was successfully applied to a 6.5 kV trench IGBT (IGBT3). A significant trade off improvement of the on state losses VCE(sat) and the switching losses is demonstrated. An additional improvement was achieved by introducing VLD edge termination into the IGBT3 technology. This leads to a VCE(sat) reduction of more than 30%, and to a reduction of the switching losses. Finally a 20% increased output current of the modules will be achieved.
