Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact
| العنوان: | Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact |
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| المؤلفون: | Yves Mols, Clement Merckling, A. Vais, Dan Mocuta, Siva Ramesh, Hao Yu, Nadine Collaert, Kristin De Meyer, Marc Schaekers, Naoto Horiguchi, Tsvetan Ivanov, Lin-Lin Wang, Jian Zhang, Yu-Long Jiang |
| المصدر: | IEEE Electron Device Letters. 40:1800-1803 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Silicon, Scanning electron microscope, Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, Electrical resistivity and conductivity, Fermi level pinning, 0103 physical sciences, Thermal stability, Electrical and Electronic Engineering, Conduction band |
| الوصف: | We compare the contact characteristics for Mo, Pd, and Ti on n-InGaAs layer with a range of active donor concentration from $1.6 \times 10^{18}$ cm−3 to $4.8 \times 10^{19}$ cm−3. The Fermi level pinning of 0.18 eV lower than the bottom of n-InGaAs conduction band is experimentally manifested. It is also revealed that the contact resistivity ( $\rho _{\text {c}}$ ) of Mo/n-InGaAs contact clearly outperforms after annealing. However, for the first time, we demonstrate that the Mo/Pd (2nm)/n-InGaAs contact can achieve a $\rho _{\text {c}}~35$ % and 20% lower than a single Mo/n-InGaAs contact after annealing at 400 °C and 450 °C for 1min, respectively. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::d63880b9dac2b584aa0e1ef62530474b https://doi.org/10.1109/led.2019.2944245 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........d63880b9dac2b584aa0e1ef62530474b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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