Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
| العنوان: | Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys |
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| المؤلفون: | Yongqiang Wang, Robert Kudrawiec, T. Jen, E.-M. Pavelescu, W. M. Linhart, Jared. W. Mitchell, Rachel Goldman, J. Occena |
| المصدر: | Applied Physics Letters. 115:082106 |
| بيانات النشر: | AIP Publishing, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Photoluminescence, Ion beam analysis, Physics and Astronomy (miscellaneous), Band gap, Composition dependence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Mole fraction, 01 natural sciences, Molecular physics, Electronic states, 0103 physical sciences, 0210 nano-technology, Spectroscopy, Energy (signal processing) |
| الوصف: | We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the “magic ratio” for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::d9929b2c6453efbcde057dfa51432e88 https://doi.org/10.1063/1.5057424 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........d9929b2c6453efbcde057dfa51432e88 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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