Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

التفاصيل البيبلوغرافية
العنوان: Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
المؤلفون: Dong Ik Suh, Jungwon Park, Matthew R. MacDonald, Myeong Seop Song, Jae Gil Lee, Hong Heon Lim, Kyoungjun Lee, Seung Chul Chae, Hyun-Jae Lee, Kunwoo Park, Tae Yoon Lee, Xinjian Lei, Zhongwei Zhu, Hyang Keun Yoo, Alexander Yoon, Jun Hee Lee
المصدر: ACS Applied Materials & Interfaces. 11:38929-38936
بيانات النشر: American Chemical Society (ACS), 2019.
سنة النشر: 2019
مصطلحات موضوعية: 010302 applied physics, Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Si doped, 02 engineering and technology, 021001 nanoscience & nanotechnology, Polarization (waves), 01 natural sciences, Ferroelectricity, Neuromorphic engineering, 0103 physical sciences, Ferroelectric RAM, Optoelectronics, General Materials Science, 0210 nano-technology, business
الوصف: The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic appl...
تدمد: 1944-8252
1944-8244
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::dbc4473169fe7e1e9ac9a0fe1f598c36
https://doi.org/10.1021/acsami.9b12878
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........dbc4473169fe7e1e9ac9a0fe1f598c36
قاعدة البيانات: OpenAIRE