Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure
| العنوان: | Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure |
|---|---|
| المؤلفون: | Kazuhiro Narano, Jin-Ping Ao, Yutaro Maeda, Lei Wang, Kazutaka Niigata |
| المصدر: | ECS Transactions. 61:65-71 |
| بيانات النشر: | The Electrochemical Society, 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Materials science, business.industry, Optoelectronics, Algan gan, Heterojunction, business, Sensitivity (electronics) |
| الوصف: | A pH sensor on an AlGaN/GaN heterostructure with differentsurface conditions was developed and evaluated. The averagesensitivity is 49.5, 47.2 and 51.8 mV/pH, respectively, forsamples with i-GaN, p-GaN and n-GaN cap layers on the AlGaNsurface. The average sensitivity is 52.9, 53.5, 54.1, and 55.2mV/pH, respectively, for the samples with an AlGaN surface andAl composition of 22%, 24%, 25%, and 35%. The sensitivity ofthe pH sensor on AlGaN/GaN heterostructure increases if theAlGaN surface is adopted and increases with increasingaluminum composition. |
| تدمد: | 1938-6737 1938-5862 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::dbfc18eb46d2b4b6b314fba3c68f950c https://doi.org/10.1149/06119.0065ecst |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........dbfc18eb46d2b4b6b314fba3c68f950c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19386737 19385862 |
|---|