Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
| العنوان: | Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain |
|---|---|
| المؤلفون: | Kuan Lin Yeh, Rou Gu Huang, Horng-Chih Lin, Tiao Yuan Huang, Ren Wei Tsai |
| المصدر: | Japanese Journal of Applied Physics. 41:2625-2629 |
| بيانات النشر: | IOP Publishing, 2002. |
| سنة النشر: | 2002 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), business.industry, Ambipolar diffusion, Schottky barrier, Transistor, General Engineering, Analytical chemistry, General Physics and Astronomy, Thermionic emission, Drain-induced barrier lowering, law.invention, Field electron emission, law, Thin-film transistor, Optoelectronics, business, Leakage (electronics) |
| الوصف: | Detailed conduction mechanisms in a conventional Schottky barrier thin-film transistor (SBTFT) and a recently proposed novel SBTFT with field-induced drain (FID) extension have been studied. The new SBTFT device with FID extension shows excellent ambipolar performance with effective suppression of gate-induced drain leakage (GIDL)-like off-state leakage that plagues conventional SBTFT devices. By characterizing the activation energy of the conduction process in the off-state for conventional SBTFT devices, it is suggested that field emission of carriers from the drain junction is the major conduction mechanism. While for the FID SBTFT devices, owing to the effect of Fermi level pinning in the FID region, thermionic emission rather than field emission becomes the dominant conduction mechanism, resulting in the effective suppression of the undesirable GIDL-like leakage current. |
| تدمد: | 1347-4065 0021-4922 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::dcd8b74a6fb1a25f61e3478e8ded9f5a https://doi.org/10.1143/jjap.41.2625 |
| رقم الأكسشن: | edsair.doi...........dcd8b74a6fb1a25f61e3478e8ded9f5a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
|---|