Total dose and proton damage in optocouplers
| العنوان: | Total dose and proton damage in optocouplers |
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| المؤلفون: | Allan H. Johnston, C.I. Lee, Bernard G. Rax, C.E. Barnes |
| المصدر: | IEEE Transactions on Nuclear Science. 43:3167-3173 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Nuclear and High Energy Physics, Materials science, Proton, business.industry, Gamma ray, Device type, Radiation, Photodiode, law.invention, Wavelength, Optics, Nuclear Energy and Engineering, law, Total dose, Radiation damage, Optoelectronics, Electrical and Electronic Engineering, business |
| الوصف: | Radiation damage from gamma rays and protons is investigated for two types of optocouplers with different physical configurations. Far more damage occurs from protons because of displacement damage, which reduces the photoresponse of the phototransistor and causes severe degradation in LED light output for one of the two device types. The other device type was far more resistant to radiation, primarily because it used a shorter wavelength LED that was relatively unaffected by protons. |
| تدمد: | 1558-1578 0018-9499 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::de32b2935cf9ae7c1050516b1e5d9cf2 https://doi.org/10.1109/23.556921 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........de32b2935cf9ae7c1050516b1e5d9cf2 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581578 00189499 |
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