A 5Gb/s low-power PCI express/USB3.0 ready PHY in 40nm CMOS technology with high-jitter immunity

التفاصيل البيبلوغرافية
العنوان: A 5Gb/s low-power PCI express/USB3.0 ready PHY in 40nm CMOS technology with high-jitter immunity
المؤلفون: Jimmy Fu, Chih-Hsien Chang, Jinn-Yeh Chien, Yung-Chow Peng, Chin-Hua Wen, Mu-Shan Lin, S.J. Yang, Chi-Chang Lu, Li-Wen Wang, Tsung-Hsin Yu, Chien-Chun Tsai, Kuo-Liang Deng, Chien-Hung Chen, Wei-Chi Chen, Wei-Chih Chen
المصدر: 2009 IEEE Asian Solid-State Circuits Conference.
بيانات النشر: IEEE, 2009.
سنة النشر: 2009
مصطلحات موضوعية: Phase-locked loop, Engineering, CMOS, business.industry, PHY, Embedded system, SerDes, Transceiver, business, Chip, Jitter, PCI Express
الوصف: A PCI Express 2.0/1.0 compatible SERDES system had been fabricated in TSMC 40nm CMOS technology. With the implementation of one lane transceiver, PLL, and PCS, the experimental results have shown this test chip passes PCI Express 2.0/1.0 TX compliance test and RX compliance test. It also achieves receiver jitter tolerance up to 0.33UI at BER of 10-12 with stressing all spec. specified jitter sources. A compact area of 510um×710um for one lane has been achieved while consuming only 125mW from 0.9V supply.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e1f00089ee517b777b4171a4d97c9b95
https://doi.org/10.1109/asscc.2009.5357154
رقم الأكسشن: edsair.doi...........e1f00089ee517b777b4171a4d97c9b95
قاعدة البيانات: OpenAIRE