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Vertical electrical conduction in pentacene polycrystalline thin films mediated by Au-induced gap states at grain boundaries

التفاصيل البيبلوغرافية
العنوان: Vertical electrical conduction in pentacene polycrystalline thin films mediated by Au-induced gap states at grain boundaries
المؤلفون: Kazuhiro Kudo, Nobuo Ueno, Masakazu Nakamura, Koshi Okamura, Takashi Miyamoto, Tomoki Sueyoshi, Tomoaki Sawabe
المصدر: Applied Physics A. 95:225-232
بيانات النشر: Springer Science and Business Media LLC, 2009.
سنة النشر: 2009
مصطلحات موضوعية: Pentacene, Electron mobility, chemistry.chemical_compound, Condensed matter physics, chemistry, Electrical resistivity and conductivity, Band gap, General Materials Science, Grain boundary, Thermionic emission, General Chemistry, Ohmic contact, Ultraviolet photoelectron spectroscopy
الوصف: Vertical electrical conduction in Au/(polycrystal-line pentacene)/Al diode structures and the influence of the kinetic energy of incident Au atoms on the conduction property have been comprehensively studied using current–voltage–temperature (I–V–T) measurements, ultraviolet photoelectron spectroscopy (UPS), atomic-force-microscope (AFM) current imaging, etc. In the I–V characteristics, a symmetrical ohmic current component appeared when a low voltage was applied, and a super-linear one appeared when a high positive voltage was applied to Au. The component in the high-forward-voltage region was concluded to be a thermionic emission of holes from Au with a 0.23-eV injection barrier, which is the normal hole conduction through the highest occupied molecular orbital of pentacene. On the other hand, the ohmic component was concluded to be a metal-like electron transport through high-density gap states at grain boundaries which were induced by the Au penetration into pentacene. UPS and I–V–T measurements clearly indicated the generation of the gap states and the enhancement of their density by the reduction of Au kinetic energy. For vertical-type devices with polycrystalline organic films, the ohmic conduction through the grain boundary will increase the leakage current. On the contrary, it possibly enhances the carrier injection in lateral-type transistors in the case of top-contact configuration.
تدمد: 1432-0630
0947-8396
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e213586339546038e6369b78393deefe
https://doi.org/10.1007/s00339-008-5015-z
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........e213586339546038e6369b78393deefe
قاعدة البيانات: OpenAIRE
الوصف
تدمد:14320630
09478396