A 2.3-mW 26.3-GHz $G_{m}$ -Boosted Differential Colpitts VCO With 20% Tuning Range in 65-nm CMOS
| العنوان: | A 2.3-mW 26.3-GHz $G_{m}$ -Boosted Differential Colpitts VCO With 20% Tuning Range in 65-nm CMOS |
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| المؤلفون: | Shahriar Mirabbasi, Milad Haghi Kashani, Reza Molavi |
| المصدر: | IEEE Transactions on Microwave Theory and Techniques. 67:1556-1565 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Physics, Radiation, business.industry, dBc, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, Inductor, 7. Clean energy, Voltage-controlled oscillator, CMOS, Phase noise, 0202 electrical engineering, electronic engineering, information engineering, Figure of merit, Optoelectronics, Colpitts oscillator, Electrical and Electronic Engineering, Center frequency, business |
| الوصف: | This paper presents an architecture for differential Colpitts voltage-controlled oscillators (VCOs) in complementary metal–oxide–semiconductor (CMOS) that utilizes three design techniques to extend the tuning range (TR) of the VCO, while maintaining a low phase noise (PN) and a low power consumption. First, a switched-capacitor bank based on a variable capacitive feedback technique is introduced to achieve a wide TR with a minimal PN degradation. Second, a $G_{m}$ -boosting technique using interstage inductors is employed to lower the power consumption and relax VCO startup issues. Third, a dynamic forward-body self-biased technique is used to further reduce the power consumption and PN of the proposed structure. As a proof of concept, a 26.3-GHz differential Colpitts VCO is designed and fabricated in a 65-nm CMOS process. Based on the measurement results, the VCO achieves a PN of −122.1 dBc/Hz at 10-MHz offset from the center frequency, and a TR of 20%. The circuit consumes 2.3 mW from a 1-V supply and excluding the pads occupies a 0.22 mm2 of silicon area. Compared to the recently published CMOS VCOs within the same frequency range, the proposed VCO simultaneously achieves a wide TR, low power dissipation, and low PN, resulting in a figure of merit (FOM) and FOM incorporating the TR (FOM $_{T}$ ) of −187 and −193 dBc/Hz at 10-MHz offset from the center frequency, respectively. |
| تدمد: | 1557-9670 0018-9480 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::e25666bc29087ba30a6f91208fca129e https://doi.org/10.1109/tmtt.2019.2899573 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........e25666bc29087ba30a6f91208fca129e |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579670 00189480 |
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