In Situ Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors
| العنوان: | In Situ Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors |
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| المؤلفون: | Yu-Chia Chang, Tiao-Yuan Huang, Horng-Chih Lin, Chuan-Ding Lin, Wei-Chen Chen |
| المصدر: | IEEE Transactions on Electron Devices. 57:1608-1615 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2010. |
| سنة النشر: | 2010 |
| مصطلحات موضوعية: | Materials science, Plasma etching, Equivalent series resistance, business.industry, Transistor, Nanowire, Nanotechnology, Electronic, Optical and Magnetic Materials, law.invention, Thin-film transistor, law, Microelectronics, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Leakage (electronics) |
| الوصف: | A poly-Si nanowire (NW) thin-film transistor configured with the double-gated scheme was fabricated and characterized. The fabrication process features the clever use of selective plasma etching to form a rectangular NW underneath a hard mask. In this paper, we show that replacing the original ion-implanted poly-Si with in situ doped poly-Si for the source/drain significantly enhances the device performance, including steeper subthreshold swing (SS), larger on/off current ratio, and reduced series resistance. In particular, the SS is improved to a record-breaking low value of 73 mV/dec, which, to the best of our knowledge, is the most ideal ever reported for a poly-Si based device. The new NW transistors with such excellent switching properties are highly promising for reducing power consumption and operational voltage in practical circuit applications. |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::e2d61d7972f7288c14fe4e3b9a01b86e https://doi.org/10.1109/ted.2010.2049227 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........e2d61d7972f7288c14fe4e3b9a01b86e |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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