The solid-state power device has the advantages of small size, light weight and low working voltage, but the output power of the device is limited and cannot meet the engineering needs of power synthesis. Based on the characteristics of erbium (Er3+)-doped optical waveguide amplifier (EDWA), Er3+-ytterbium (YB3+) nanocrystalline were introduced into the design of solid-state power devices, and then nanoelectronic devices were designed to improve the output power of the device. First, NaYF4: 8%Er3+, 16%Yb3+ nanocrystalline were prepared. SU-8 UV glue was used to prepare NaYF4: Er3+. Yb3+ nanocrystalline doped polymer waveguide amplifier was designed and used to observe the waveguide morphology and its performance was tested. Then, the power synthesis amplification technology was studied, and the power distribution-synthesis network based on waveguide E–T junction was designed. The waveguide-microstrip transition structure adopted ridge waveguide transition. On this basis, the 4-stage waveguide E-plane stepped structure was introduced and its structure was simulated. In the design of the power synthesis amplifier, the signal gain of the synthesis amplifier was tested by using the nanocrystal-doped polymer waveguide amplifier as the power unit device. The experimental results show that the output signal light of the nanocrystal-doped polymer waveguide amplifier can be received by an infrared detector. When the pump light power at 980 nm is 200 mW and the signal light power is only 0.1 mW, the maximum relative gain is 4.7 dB in a 1.2 cm long waveguide. The saturated output power of the power unit device is 19.3 dB~19.8 dB, which is close to the saturated output power required by the chip manual. The gain curve of the power synthesis amplifier is relatively flat, that is, the use of nanocrystal-doped polymer waveguide electronic devices effectively improves the synthetic signal gain and reduces the adverse impact of power distribution-synthetic passive network loss.
