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Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer

التفاصيل البيبلوغرافية
العنوان:	Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer
المؤلفون:	Youngkuk Kim, Jaemin Kim, Ashwath Narayana, Eun-Chel Cho, S.V. Lokesh, Seyoun Kim, Kumar Mallem, Sanchari Chodary, Junsin Yi, Minkyu Ju, Jinsu Park, M V Ravi Kumar
المصدر:	Materials Research Express. 6:086442
بيانات النشر:	IOP Publishing, 2019.
سنة النشر:	2019
مصطلحات موضوعية:	Biomaterials, In situ, Materials science, Polymers and Plastics, X-ray photoelectron spectroscopy, Annealing (metallurgy), Metals and Alloys, Composite material, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
تدمد:	2053-1591
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::e75e95de4f78551bc90f9ea417a047d0 https://doi.org/10.1088/2053-1591/ab2263
حقوق:	OPEN
رقم الأكسشن:	edsair.doi...........e75e95de4f78551bc90f9ea417a047d0
قاعدة البيانات:	OpenAIRE

الوصف
تدمد:	20531591