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Nanosecond magnetic switching of ferromagnet-antiferromagnet bilayers in thermally assisted magnetic random access memory

التفاصيل البيبلوغرافية
العنوان: Nanosecond magnetic switching of ferromagnet-antiferromagnet bilayers in thermally assisted magnetic random access memory
المؤلفون: B. Delaet, O. Redon, J. Herault, B. Dieny, Y. Conraux, Marie-Claire Cyrille, Clarisse Ducruet, C. Portemont, R. C. Sousa, I. L. Prejbeanu, K. Mackay
المصدر: Journal of Applied Physics. 106:014505
بيانات النشر: AIP Publishing, 2009.
سنة النشر: 2009
مصطلحات موضوعية: Nuclear magnetic resonance, Materials science, Condensed matter physics, Ferromagnetism, Field (physics), General Physics and Astronomy, Antiferromagnetism, Pulse duration, Biasing, Time domain, Nanosecond, Current density
الوصف: The magnetic switching of the exchange biased storage layer in thermally assisted magnetic random access memory cells has been studied in the nanosecond time domain. Under reversed static external field, the magnetic tunnel junctions (MTJs) were subjected to current heating pulses long enough to heat the structure above the blocking temperature of the antiferromagnetic layer. The magnetic response of the storage layer was characterized by single-shot real-time measurement of MTJ resistance. The switching of the storage layer exhibits stochastic fluctuations. Nevertheless, using a heating current density of 4.7×106 A/cm2 corresponding to a bias voltage of 1.8 V, the switching takes place in less than 4 ns under 5 mT. Interestingly, the probability of switching versus pulse duration exhibits characteristic periodic steps which are ascribed to a combined effect of the applied field and spin transfer produced by the heating current pulses.
تدمد: 1089-7550
0021-8979
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e9c66e408774cde23216844d8b047d48
https://doi.org/10.1063/1.3158231
رقم الأكسشن: edsair.doi...........e9c66e408774cde23216844d8b047d48
قاعدة البيانات: OpenAIRE
الوصف
تدمد:10897550
00218979