Effects of surface chemical treatment on the formation of metal GaAs interfaces
| العنوان: | Effects of surface chemical treatment on the formation of metal GaAs interfaces |
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| المؤلفون: | Michio Niwano, Taka Aki Miura, Masanori Shinohara, Nobuo Miyamoto, Daisei Shoji |
| المصدر: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:363-372 |
| بيانات النشر: | American Vacuum Society, 1999. |
| سنة النشر: | 1999 |
| مصطلحات موضوعية: | Materials science, Photoemission spectroscopy, Inorganic chemistry, Alloy, Oxide, Surfaces and Interfaces, Island growth, engineering.material, Condensed Matter Physics, Surfaces, Coatings and Films, Overlayer, Metal, chemistry.chemical_compound, Chemical engineering, chemistry, visual_art, visual_art.visual_art_medium, engineering, Layer (electronics), Deposition (law) |
| الوصف: | We have used synchrotron radiation photoemission spectroscopy to investigate the chemical interactions at metal/GaAs interfaces during deposition of Au and In onto GaAs(100) surfaces that are chemically treated in etching solutions. We determine that there exists a thin native oxide layer on the surface that is treated in H2SO4 solution. Au reacts with the oxide overlayer to generate AuGa alloy, but In does not interact appreciably with the oxide overlayer leading to the island growth of the In overlayer at high In coverages. We confirmed (NH4)2Sx treatment leads to a GaAs surface that is terminated with sulfur. For the Au deposition onto this surface, alloy formation and segregates both at interfacial regions and on metallic overlayers are significantly suppressed, leading to the island growth of the Au overlayer. On the other hand, at initial stages of In deposition, In strongly interacted with the (NH4)2Sx-treated surface to generate a thin layer of InxGa1−xAs alloy on which the In overlayer formed in ... |
| تدمد: | 1520-8559 0734-2101 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ed2eacc5ab6a8b25a3fa563c3773c42e https://doi.org/10.1116/1.581596 |
| رقم الأكسشن: | edsair.doi...........ed2eacc5ab6a8b25a3fa563c3773c42e |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 15208559 07342101 |
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