Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications
| العنوان: | Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications |
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| المؤلفون: | M.L. Megherbi, F. G. Della Corte, Fortunato Pezzimenti, Lakhdar Dehimi, Kamal Zeghdar |
| المصدر: | Journal of Electronic Materials. 49:1322-1329 |
| بيانات النشر: | Springer Science and Business Media LLC, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Condensed matter physics, Solid-state physics, Orders of magnitude (temperature), Schottky barrier, Schottky diode, Thermionic emission, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, 0210 nano-technology, Sensitivity (electronics), Diode, Voltage |
| الوصف: | The experimental forward current–voltage–temperature (ID–VD–T) characteristics of Mo/4H-SiC Schottky barrier diodes are investigated by means of a careful simulation study. The simulations are in excellent agreement with measurements in the whole explored current range extending over ten orders of magnitude for temperatures from 303 K to 498 K. The diode ideality factor tends to decrease while the Schottky barrier height increases with increasing temperature. These variations are explained on the basis of the thermionic emission theory with a Gaussian distribution of the barrier height around the Mo/4H-SiC interface. The calculated Richardson constant is A* = 155.78 A cm−2 K−2 which is very close to the theoretical value of 146 A cm−2 K−2 expected for n-type 4H-SiC. The linear dependence of VD on temperature is also investigated for several bias currents. The obtained results reveal that the device is well suited for temperature-sensing applications, showing a good coefficient of determination (R2 = 0.99974 for 100 nA ≤ ID ≤ 1 mA) and a high sensitivity (S = 1.92 mV K−1 for ID = 1 μA). The temperature error between the voltage measurements and their linear best fit is lower than 1.5 K. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::efcdc9d20ee7b393c05cb05104381243 https://doi.org/10.1007/s11664-019-07802-6 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........efcdc9d20ee7b393c05cb05104381243 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
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