Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a √3 × √3-Ga Buffer Layer
| العنوان: | Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a √3 × √3-Ga Buffer Layer |
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| المؤلفون: | Lan Chen, J. F. Qiu, Kehui Wu, Li-Qun Jiang, Jiehui He |
| المصدر: | Chinese Physics Letters. 31:128102 |
| بيانات النشر: | IOP Publishing, 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Free electron model, Materials science, Analytical chemistry, General Physics and Astronomy, Nanotechnology, Particle in a box, law.invention, Electron diffraction, law, Monolayer, Kinetic Monte Carlo, Scanning tunneling microscope, Layer (electronics), Deposition (law) |
| الوصف: | It is known that, when Ag is deposited on Si(111)-7×7 substrates in a conventional growth procedure at room temperature, no atomically flat Ag film could be obtained. We use scanning tunneling microscopy and low-energy electron diffraction to investigate the growth of ultra-thin Ag films on the Si(111) substrates at room temperature. Our study reveals that, upon introducing a Si(111)-√3 × √3-Ga buffer layer, atomically flat Ag films can easily grow on Si(111) with a critical thickness of two monolayers. Moreover, Ag film growth follows a layer-by-layer mode with further deposition. This novel growth behavior of Ag can be explained in terms of a free electron model (i.e., particle in a box) and kinetic Monte Carlo simulations. |
| تدمد: | 1741-3540 0256-307X |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f068a9a8953571d1092a4a74150b25fc https://doi.org/10.1088/0256-307x/31/12/128102 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........f068a9a8953571d1092a4a74150b25fc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17413540 0256307X |
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