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Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

التفاصيل البيبلوغرافية
العنوان:	Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
المؤلفون:	J. Kwo, Chien-Ting Wu, Yu-Jie Hong, Yi-Ting Cheng, Tun-Wen Pi, Chao-Kai Cheng, Hsien-Wen Wan, Minghwei Hong, Chia-Hung Hsu
المصدر:	ACS Applied Electronic Materials. 3:2164-2169
بيانات النشر:	American Chemical Society (ACS), 2021.
سنة النشر:	2021
مصطلحات موضوعية:	Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, Germanium, Substrate (electronics), Epitaxy, Electronic, Optical and Magnetic Materials, chemistry, Monolayer, Materials Chemistry, Electrochemistry, Wafer, Single crystal, Deposition (law)
الوصف:	Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 °C, followed by direct depositio...
تدمد:	2637-6113
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::f3512dfa9e65e75bd89437979a29aced https://doi.org/10.1021/acsaelm.0c01134
حقوق:	CLOSED
رقم الأكسشن:	edsair.doi...........f3512dfa9e65e75bd89437979a29aced
قاعدة البيانات:	OpenAIRE

الوصف
تدمد:	26376113