Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models
| العنوان: | Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models |
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| المؤلفون: | Adel Kalboussi, Slah Hlali, Neila Hizem |
| المصدر: | Bulletin of Materials Science. 40:67-78 |
| بيانات النشر: | Springer Science and Business Media LLC, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Insulator (electricity), Nanotechnology, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, law.invention, Condensed Matter::Materials Science, Capacitor, Semiconductor, Mechanics of Materials, Gate oxide, law, 0103 physical sciences, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, General Materials Science, 0210 nano-technology, Metal gate, business, High-κ dielectric |
| الوصف: | In this paper the electrical characteristics of metal–insulator–semiconductor (MIS) and metal–insulator–semiconductor–insulator–metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high- k gate dielectrics (SiO2, HfO2, La2O3 and TiO2) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator–semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance–voltage (C– V), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects. |
| تدمد: | 0973-7669 0250-4707 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f431e7e59c470d4c652204b2e41b3ac3 https://doi.org/10.1007/s12034-016-1341-5 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........f431e7e59c470d4c652204b2e41b3ac3 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 09737669 02504707 |
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