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The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips

التفاصيل البيبلوغرافية
العنوان:	The integration of proton bombardment process into the manufacturing of mixed-signal/RF chips
المؤلفون:	H.M. Hsu, C.M. Wu, W.C. Lin, C.W. Chang, Y.C. Sun, G.J. Chern, L.F. Lin, C.S. Chang, K.C. Lan, D.D. Tang, C.P. Chao, J.C. Guo, L.P. Lee, C.Y. Lee, W.Y. Lien, D.S. Du, L.S. Lai, C.H. Wang
المصدر:	IEEE International Electron Devices Meeting 2003.
بيانات النشر:	IEEE, 2004.
سنة النشر:	2004
مصطلحات موضوعية:	Ion implantation, Materials science, Proton, business.industry, MOSFET, Analytical chemistry, Process (computing), Optoelectronics, Wafer, Mixed-signal integrated circuit, Chip, Inductor, business
الوصف:	Proton bombardment technology is integrated into the standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10/sup 15/ cm/sup -2/, 100 /spl mu/m deep bombardment through mask windows, /spl rho//sub s/=20k/spl sim/50k /spl Omega/.cm regions are formed, which are thermally stable at 200/spl deg/C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::f6014a7a4884ab50e8dd32f92e612d9a https://doi.org/10.1109/iedm.2003.1269370
رقم الأكسشن:	edsair.doi...........f6014a7a4884ab50e8dd32f92e612d9a
قاعدة البيانات:	OpenAIRE

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