Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT
| العنوان: | Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT |
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| المؤلفون: | Ekkanath Madathil Sankara Narayanan, M. Sweet, N. Luther-King |
| المصدر: | IEEE Transactions on Power Electronics. 27:3072-3080 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2012. |
| سنة النشر: | 2012 |
| مصطلحات موضوعية: | Gate turn-off thyristor, Engineering, Current injection technique, business.industry, Logic gate, Bipolar junction transistor, Electrical engineering, Thyristor, Power semiconductor device, Insulated-gate bipolar transistor, MOS-controlled thyristor, Electrical and Electronic Engineering, business |
| الوصف: | We report results of comprehensive 2-D simulation evaluation of the first MOS-controlled thyristor structure employing the super junction concept on a 1.2-kV field stop structure. In comparison to a standard device, simultaneous reduction in Vce(sat) and Eoff can be achieved in a super junction trench clustered insulated gate bipolar transistor (SJ-TCIGBT). The simulation results show that up to 80% reduction in Eoff is possible. Unlike the super junction insulated gate bipolar transistors, there is no significant increase in the saturation current with the anode voltage or the depth of the pillars. SJ-TCIGBT is a highly promising next generation device concept with record-breaking Vce(sat)-Eoff tradeoff enhancement to improve converter efficiency. |
| تدمد: | 1941-0107 0885-8993 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f88f81707a8511298636eb9c11d8cb9c https://doi.org/10.1109/tpel.2011.2162965 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........f88f81707a8511298636eb9c11d8cb9c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19410107 08858993 |
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