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Dielectric properties and resistance mechanism of BiFeO3 films with (1 1 0) orientation

التفاصيل البيبلوغرافية
العنوان: Dielectric properties and resistance mechanism of BiFeO3 films with (1 1 0) orientation
المؤلفون: Xiuhong Dai, Xiongrui Liu, Yanle Zhang, J. M. Song, Xiaobo Li, Jun Zhang, B. T. Liu, Lei Zhao, J. T. Liang, X.D. Meng
المصدر: Materials Letters. 229:312-315
بيانات النشر: Elsevier BV, 2018.
سنة النشر: 2018
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Mechanical Engineering, Heterojunction, 02 engineering and technology, Dielectric, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Thermal conduction, 01 natural sciences, law.invention, Crystal, Capacitor, Mechanics of Materials, law, 0103 physical sciences, Optoelectronics, General Materials Science, Thin film, 0210 nano-technology, business
الوصف: The Pt/BiFeO3/La0.5Sr0.5CoO3/STO (Pt/BFO/LSCO/STO) heterojunction capacitors were fabricated on (1 1 0) SrTiO3 (STO) substrates by off-axis RF magnetron sputtering. The structure and physical properties of BiFeO3 thin films were investigated. It was found that the BFO film showed single phase (1 1 0) epitaxial perovskite structure with high crystal quality. The Pt/BFO/LSCO capacitor exhibited a saturated butterfly loop and a stable bipolar resistance switching behavior after post-annealing. The current-voltage characteristic of Pt/BFO/LSCO heterostructure is well explained by the space-charge-limited conduction mechanism.
تدمد: 0167-577X
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f93e12f7aa25d1221634b06746c57b45
https://doi.org/10.1016/j.matlet.2018.07.055
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........f93e12f7aa25d1221634b06746c57b45
قاعدة البيانات: OpenAIRE
الوصف
تدمد:0167577X