In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by “Rule 07”.
