In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits
| العنوان: | In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits |
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| المؤلفون: | Alexis Farcy, B. Guigues, Joaquim Torres, Y. Morand, Emmanuel Defay, T. Bertaud, Serge Blonkowski, Bernard Flechet, T.T. Vo, Cedric Bermond, Thierry Lacrevaz |
| المصدر: | IET Microwaves, Antennas & Propagation. 2:781-788 |
| بيانات النشر: | Institution of Engineering and Technology (IET), 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Permittivity, Materials science, business.industry, Copper interconnect, Electrical engineering, Dielectric, Integrated circuit, Microstrip, law.invention, Back end of line, Capacitor, law, Optoelectronics, Electrical and Electronic Engineering, business, High-κ dielectric |
| الوصف: | Integration of high permittivity dielectrics or commonly named high- k dielectrics is widely investigated as a way to reduce passive component size in the chip. The complex permittivity microwave characterisation of medium- k materials such as HfO 2 and high- k materials such as SrTiO 3 is presented. The characterisation method, using coplanar, microstrip waveguides or metal-insulator-metal (MIM) capacitor, allows a large band characterisation, from 40-MHz to 40-GHz. It also allows investigating these materials with a large-scale thickness, from 10 up to 500-nm, in different technological configurations, appropriate for insulators from immature to mature, that is, those which are ready for the integration in an advanced damascene architecture of MIM capacitor. It is shown that the permittivity of such materials can be process- and frequency-dependent. |
| تدمد: | 1751-8733 1751-8725 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f9ffe7a1b048a77141df58fcfc6fa5a3 https://doi.org/10.1049/iet-map:20070344 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........f9ffe7a1b048a77141df58fcfc6fa5a3 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17518733 17518725 |
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