Photon emission excited in paraffin-passivated GaAs surfaces by scanning tunneling microscopy
| العنوان: | Photon emission excited in paraffin-passivated GaAs surfaces by scanning tunneling microscopy |
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| المؤلفون: | J. Beauvillain, F. Ajustron, G. Seine, A. Carladous, Roland Coratger |
| المصدر: | Journal of Applied Physics. 84:1085-1089 |
| بيانات النشر: | AIP Publishing, 1998. |
| سنة النشر: | 1998 |
| مصطلحات موضوعية: | Materials science, business.industry, Astrophysics::High Energy Astrophysical Phenomena, Scanning tunneling spectroscopy, General Physics and Astronomy, Biasing, Spin polarized scanning tunneling microscopy, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, Condensed Matter::Materials Science, Semiconductor, law, Excited state, Emission spectrum, Atomic physics, Scanning tunneling microscope, business, Astrophysics::Galaxy Astrophysics, Quantum tunnelling |
| الوصف: | Photon emission from GaAs surfaces induced by scanning tunneling microscopy has been detected in air. Surfaces have been protected from oxidation by a thin film of paraffin oil. Tunneling topography, related photon mapping, and the corresponding emission spectrum have been simultaneously acquired. Also, the influence of applied bias voltage on the emission yield has been studied. The results allow this photon emission to be ascribed to radiative recombinations in the semiconductor bulk. An irreversible decay of emission yield at high negative sample voltages (−3 V) is also observed. |
| تدمد: | 1089-7550 0021-8979 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::fdc71a90e66c9b20da07fa35e40603f0 https://doi.org/10.1063/1.368107 |
| رقم الأكسشن: | edsair.doi...........fdc71a90e66c9b20da07fa35e40603f0 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10897550 00218979 |
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