{\gamma}-GeSe:a new hexagonal polymorph from group IV-VI monochalcogenides
| العنوان: | {\gamma}-GeSe:a new hexagonal polymorph from group IV-VI monochalcogenides |
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| المؤلفون: | Jeongsu Jang, Kwanpyo Kim, Sol Lee, Woongki Na, Joonho Kim, Jonghwan Kim, Hyeonsik Cheong, Han-gyu Kim, Minseol Kim, Joong Eon Jung, Sangho Yoon, Je Myoung Park, Yangjin Lee, Arnab Ghosh, Hyoung Joon Choi |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Materials science, Condensed Matter - Mesoscale and Nanoscale Physics, Mechanical Engineering, Bioengineering, 02 engineering and technology, General Chemistry, Crystal structure, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, symbols.namesake, Crystallography, Electron diffraction, Electrical resistivity and conductivity, Elemental analysis, Transmission electron microscopy, Group (periodic table), symbols, General Materials Science, Orthorhombic crystal system, 0210 nano-technology, Raman spectroscopy |
| الوصف: | The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called {\gamma}-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized {\gamma}-GeSe exhibits high electrical conductivity of 3x10^5 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, {\gamma}-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating {\gamma}-GeSe. The newly identified crystal symmetry of {\gamma}-GeSe warrants further studies on various physical properties of {\gamma}-GeSe. Comment: 24 pages, 5 figures |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0864848fb7a6e5b8458b97c091c44872 http://arxiv.org/abs/2105.04938 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....0864848fb7a6e5b8458b97c091c44872 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |