Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

التفاصيل البيبلوغرافية
العنوان: Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)
المؤلفون: Adama Mballo, Abdallah Ougazzaden, Paul L. Voss, Phuong Vuong, Suresh Sundaram, Yacine Halfaya, Soufiane Karrakchou, Jean-Paul Salvestrini, Chris Bishop, Simon Gautier, Taha Ayari
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton
المصدر: Advanced Materials Technologies
Advanced Materials Technologies, Wiley, 2019, 4 (10), pp.1970057. ⟨10.1002/admt.201970057⟩
بيانات النشر: HAL CCSD, 2019.
سنة النشر: 2019
مصطلحات موضوعية: Materials science, 02 engineering and technology, Substrate (electronics), Nitride, 010402 general chemistry, 01 natural sciences, Industrial and Manufacturing Engineering, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, General Materials Science, Wafer, h-BN, pick-and-place, business.industry, 021001 nanoscience & nanotechnology, III-nitrides, 0104 chemical sciences, Mechanics of Materials, Scalability, Optoelectronics, SMT placement equipment, Sapphire substrate, 0210 nano-technology, business, heterogeneous integration, Light-emitting diode
الوصف: International audience; In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.
اللغة: English
تدمد: 2365-709X
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08b410be392d3566f6eb2b6606355490
https://hal.archives-ouvertes.fr/hal-02321646
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....08b410be392d3566f6eb2b6606355490
قاعدة البيانات: OpenAIRE