Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL
| العنوان: | Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL |
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| المؤلفون: | Thierry Baron, E. A. Leon Perez, J. Moeyaert, Serge Blonkowski, Nicolas Baboux, L. Militaru, Khaled Ayadi, S. Labau, Abdelkader Souifi, D. Deleruyelle, Pierre-Vincent Guenery |
| المساهمون: | Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut National des Sciences Appliquées (INSA), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Dispositifs Electroniques (INL - DE), STMicroelectronics [Crolles] (ST-CROLLES), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | IEEE 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩ |
| بيانات النشر: | HAL CCSD, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Fabrication, Nanostructure, Materials science, business.industry, 020209 energy, Oxide, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Resistive random-access memory, chemistry.chemical_compound, chemistry, CMOS, Dispersion (optics), 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Indium, ComputingMilieux_MISCELLANEOUS |
| الوصف: | this work report on the integration of indium oxide (In2O3) nanocrystals (NCs) for Resistive Random Access Memory (RRAM) applications. The RRAM integration based on MOCVD and ALD depositions is fully compatible fabrication process with CMOS of back-end-off-line. A bipolar switching behavior is clearly linked to In2O3 NC. First RRAM prototypes with HRS/LRS ratios higher than 104 are measured. Device parameter dispersion is observed mainly for Vreset. The NC density has been increased from 3. 108 cm-2 to 2. 10 10 cm-2 with an average NC diameter reduced from 12 nm to 4 nm. The optimization of NC's size dispersion and density is finally expected to reduce the observed parameter dispersion. |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10288e06c600adc86d13dca3c3d4f87c https://hal.univ-grenoble-alpes.fr/hal-02330674 |
| رقم الأكسشن: | edsair.doi.dedup.....10288e06c600adc86d13dca3c3d4f87c |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |