Chemically induced Fermi level pinning effects of high-k dielectrics on graphene
| العنوان: | Chemically induced Fermi level pinning effects of high-k dielectrics on graphene |
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| المؤلفون: | Yun Ji Kim, Soyoung Kim, Ukjin Jung, Byoung Hun Lee |
| المصدر: | Scientific Reports Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018) |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Silicon, chemistry.chemical_element, lcsh:Medicine, 02 engineering and technology, Dielectric, 01 natural sciences, Oxygen, Article, law.invention, law, 0103 physical sciences, Work function, Metal gate, lcsh:Science, High-κ dielectric, 010302 applied physics, Multidisciplinary, Condensed matter physics, Graphene, lcsh:R, 021001 nanoscience & nanotechnology, chemistry, Fermi level pinning, lcsh:Q, 0210 nano-technology |
| الوصف: | High-k materials such as Al2O3 and HfO2 are widely used as gate dielectrics in graphene devices. However, the effective work function values of metal gate in graphene FET are significantly deviated from their vacuum work function, which is similar to the Fermi level pinning effect observed in silicon MOSFETs with high-k dielectric. The degree of deviation represented by a pinning factor was much worse with HfO2 (pinning factor (S) = 0.19) than with Al2O3 (S = 0.69). We propose that the significant pinning-like behaviors induced by HfO2 are correlated with the oxygen exchange reactions occurred at the interface of graphene and HfO2. |
| تدمد: | 2045-2322 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18df387ebd87e962a1a86c91d959f35d https://pubmed.ncbi.nlm.nih.gov/29445202 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....18df387ebd87e962a1a86c91d959f35d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20452322 |
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