A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process
| العنوان: | A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process |
|---|---|
| المؤلفون: | Arnaud Peizerat, Christian Enz, Assim Boukhayma |
| المصدر: | IEEE Journal of Solid-State Circuits. 51:2180-2191 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | thermal noise, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, thick oxide, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, Noise (electronics), PMOS logic, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Image noise, low light, Flicker noise, Electrical and Electronic Engineering, sub-electron, CIS, 010302 applied physics, Discrete mathematics, Physics, CMOS sensor, image sensor, business.industry, CMOS, 020208 electrical & electronic engineering, Fixed-pattern noise, Electrical engineering, thin oxide, 1 / f noise, low noise, ComputingMethodologies_DOCUMENTANDTEXTPROCESSING, business, Dark current |
| الوصف: | A sub- $0.5\,\text {e}^{-}_{\text {rms}}$ temporal read noise VGA (640H ${\times }480\text {V}$ ) CMOS image sensor has been integrated in a standard $0.18\,\mu \text {m}~4$ PM CMOS process. The low noise performance is achieved exclusively through circuit optimization without any process refinements. The presented imager relies on a 4T pixel of $6.5\,\mu \text {m}$ pitch with a properly sized and biased thin oxide PMOS source follower. A full characterization of the proposed image sensor, at room temperature, is presented. With a pixel bias of $1.5\,\mu \text {A}$ the sensor chip features an input-referred noise histogram from $0.25\,\text {e}^{-}_{\text {rms}}$ to a few $\text {e}^{-}_{\text {rms}}$ peaking at $0.48\,\text {e}^{-}_{\text {rms}}$ . The imager features a full well capacity of $6400\,\text {e}^{-}$ and its frame rate can go up to $80\,\text {fps}$ . It also features a fixed pattern noise as low as 0.77%, a lag of 0.1% and a dark current of $5.6\,\text {e}^{-}/\text {s}$ . It is also shown that the implementation of the in-pixel n-well does not impact the quantum efficiency of the pinned photo-diode. |
| تدمد: | 1558-173X 0018-9200 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ddc6b2ca25acf191e25f7b6d505855b https://doi.org/10.1109/jssc.2016.2579643 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....1ddc6b2ca25acf191e25f7b6d505855b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1558173X 00189200 |
|---|