Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes
| العنوان: | Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes |
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| المؤلفون: | Joshua A. Robinson, Yunpeng Liu, Jeehwan Kim, Tom Osadchy, Kuan Qiao, Richard J. Molnar, Wei Kong, Chansoo Kim, Doyoon Lee, Huashan Li, Kuangye Lu, Wenhao Li, Rachael L. Myers-Ward, Xuechun Sun, Shruti Subramanian, Hyunseok Kim |
| المصدر: | Nano Letters. 21:4013-4020 |
| بيانات النشر: | American Chemical Society (ACS), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Graphene, Mechanical Engineering, Nucleation, Bioengineering, 02 engineering and technology, General Chemistry, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, Surface energy, law.invention, Membrane, Semiconductors, Chemical engineering, law, Graphite, General Materials Science, Wafer, Crystallization, 0210 nano-technology, Layer (electronics) |
| الوصف: | Free-standing crystalline membranes are highly desirable owing to recent developments in heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the release of crystalline membranes from their substrates. However, suppressed nucleation density due to low surface energy has been a challenge for crystallization; reactive materials synthesis environments can induce detrimental damage to vdW surfaces, often leading to failures in membrane release. This work demonstrates a novel platform based on graphitized SiC for fabricating high-quality free-standing membranes. After mechanically removing epitaxial graphene on a graphitized SiC wafer, the quasi-two-dimensional graphene buffer layer (GBL) surface remains intact for epitaxial growth. The reduced vdW gap between the epilayer and substrate enhances epitaxial interaction, promoting remote epitaxy. Significantly improved nucleation and convergent quality of GaN are achieved on the GBL, resulting in the best quality GaN ever grown on two-dimensional materials. The GBL surface exhibits excellent resistance to harsh growth environments, enabling substrate reuse by repeated growth and exfoliation. |
| تدمد: | 1530-6992 1530-6984 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f2b0b59b1c8a0ab827652cbcc31fa2a https://doi.org/10.1021/acs.nanolett.1c00673 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....1f2b0b59b1c8a0ab827652cbcc31fa2a |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 15306992 15306984 |
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