Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration
| العنوان: | Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration |
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| المؤلفون: | P. Brianceau, M. Rommel, Hans-Jürgen Engelmann, M.-L. Pourteau, J. von Borany, F. Laulagnet, Guido Rademaker, J.-A. Dallery, Ahmed Gharbi, L. Baier, Karl-Heinz Heinig, Raluca Tiron |
| المساهمون: | Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Vistec Electron Beam GmbH, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), European Project: 688072,H2020,H2020-ICT-2015,IONS4SET(2016), Publica |
| المصدر: | Micro and Nano Engineering Micro and Nano Engineering, Elsevier, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩ Micro and Nano Engineering, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩ Micro and Nano Engineering 9(2020), 100074 Micro and Nano Engineering, Vol 9, Iss, Pp 100074-(2020) |
| بيانات النشر: | HAL CCSD, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Reactive ion etching, Materials science, Fabrication, lcsh:TK7800-8360, EFTEM, 02 engineering and technology, 01 natural sciences, 010309 optics, Single-electron transistor, Characterization methods, E-beam lithography, Robustness (computer science), lcsh:Technology (General), Energy-filtered transmission electron microscopy, 0103 physical sciences, Electrical and Electronic Engineering, Reactive-ion etching, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Lithography, Nanopillar, business.industry, ICP-RIE, lcsh:Electronics, Single-electron-transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Multilayer nanopillars, CMOS, lcsh:T1-995, Optoelectronics, Si nanodots, 0210 nano-technology, business, Silicon nanodots, Critical dimension |
| الوصف: | International audience; SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the patterning of sub-20 nm Si Nano-Pillars (NP) with an embedded thin SiO2 layer. In this work, we report the patterning of such multi-layer isolated NP with e-beam lithography combined with a Reactive Ion Etching (RIE) process. The Critical Dimension (CD) uniformity and the robustness of the Process of Reference are evaluated. Characterization methods, either by CD-SEM for the CD, or by TEM cross-section for the NP profile, are compared and discussed. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 2590-0072 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ffaa0176ed92185b48dbaa77d24531d https://hal-cea.archives-ouvertes.fr/cea-03409432 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....1ffaa0176ed92185b48dbaa77d24531d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 25900072 |
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