A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs
| العنوان: | A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs |
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| المؤلفون: | Ralph Spolenak, M. Schmidt, A. D. Barros, R. Geiger, Martin J. Süess, R. A. Minamisawa, Hans Sigg |
| المصدر: | IEEE ELECTRON DEVICE LETTERS |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | 010302 applied physics, Electron mobility, Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, Strain engineering, chemistry, Etching (microfabrication), 0103 physical sciences, MOSFET, Electronic engineering, Optoelectronics, Node (circuits), Electrical and Electronic Engineering, 0210 nano-technology, business |
| الوصف: | We propose a strain engineering approach that is based on the patterning and under etching of fins using strained Si grown on SiGe strain relaxed buffers. The method enhances the strain of the patterned Fins up to ~ 2.9 GPa without the need of epitaxial source and drain stressors. We report a systematic simulation study on the scaling of this method for the present and future technology nodes down to 7 nm. Finally, we estimate that the technique deliveries an electron mobility enhancement up to 87% for FinFETs, independent of the technology node. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2362d1a83933a6516737a6e8ed537237 https://doi.org/10.1109/led.2014.2300865 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....2362d1a83933a6516737a6e8ed537237 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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