Amorphization Effect for Kondo Semiconductor CeRu2Al10
| العنوان: | Amorphization Effect for Kondo Semiconductor CeRu2Al10 |
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| المؤلفون: | Hideaki Takano, Y. Amakai, Kei Ishihara, Yasuhiro Shiojiri, Hiroto Hitotsukabuto, Shigeyuki Murayama, Naoki Momono |
| المصدر: | Advances in Condensed Matter Physics, Vol 2017 (2017) |
| بيانات النشر: | Hindawi Limited, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Article Subject, Condensed matter physics, Alloy, 02 engineering and technology, Atmospheric temperature range, engineering.material, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Magnetic susceptibility, lcsh:QC1-999, Magnetic field, Amorphous solid, Paramagnetism, Electrical resistivity and conductivity, 0103 physical sciences, engineering, Kondo effect, 010306 general physics, 0210 nano-technology, lcsh:Physics |
| الوصف: | We measured the magnetic susceptibility χ, electrical resistivity ρ, and specific heat Cp of a sputtered amorphous (a-)CeRu2Al10 alloy. χ value for a-CeRu2Al10 alloy follows a Curie-Weiss paramagnetic behavior in the high-temperature region, and magnetic transition was not observed down to 2 K. The effective paramagnetic moment peff is 1.19 μB/Ce-atom. The resistivity shows a typical disordered alloy behavior, that is, small temperature dependence for the whole temperature range. We observed an enhancement of ρ and Cp/T in the low-temperature region of T<10 K. The enhancement in ρ is suppressed by applying a magnetic field. It is suggested that this behavior is caused by the Kondo effect. |
| وصف الملف: | text/xhtml |
| تدمد: | 1687-8124 1687-8108 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33a84b1ea5be18981a66b58e525c55b2 https://doi.org/10.1155/2017/9848151 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....33a84b1ea5be18981a66b58e525c55b2 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 16878124 16878108 |
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