Simultaneous Silicon Oxide Growth and Electrophoretic Deposition of Graphene Oxide
| العنوان: | Simultaneous Silicon Oxide Growth and Electrophoretic Deposition of Graphene Oxide |
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| المؤلفون: | Pina A. Fritz, Stefanie C. Lange, Han Zuilhof, Remko M. Boom, C.G.P.H. Schroën, Marcel Giesbers |
| المساهمون: | School of Chemical and Biomedical Engineering |
| المصدر: | Langmuir, 35(10), 3717-3723 Langmuir Langmuir 35 (2019) 10 |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Wageningen Electron Microscopy Centre, Materials science, Silicon, Oxide, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 01 natural sciences, Article, law.invention, chemistry.chemical_compound, Electrophoretic deposition, X-ray photoelectron spectroscopy, law, Electrochemistry, Life Science, General Materials Science, Electrophoretic Deposition, Silicon oxide, Food Process Engineering, Spectroscopy, VLAG, Graphene, Organic Chemistry, Chemical engineering [Engineering], technology, industry, and agriculture, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Organische Chemie, 0104 chemical sciences, chemistry, Chemical engineering, Nanyang Technological University Singapore, 0210 nano-technology, Graphene Oxide, Layer (electronics) |
| الوصف: | During electrophoretic deposition of graphene oxide (GO) sheets on silicon substrates, not only deposition but also simultaneous anodic oxidation of the silicon substrate takes place, leading to a three-layered material. Scanning electron microscopy images reveal the presence of GO sheets on the silicon substrate, and this is also confirmed by X-ray photoelectron spectroscopy (XPS), albeit that the carbon portion increases with increasing emission angle, hinting at a thin carbon layer. With increasing applied potential and increasing conductivity of the GO solution, the carbon signal decreases, whereas the overall thickness of the added layer formed on top of the silicon substrate increases. Through XPS spectra in which the Si 2p peaks shifted under those conditions to 103–104 eV, we were able to conclude that significant amounts of oxygen are present, indicative of the formation of an oxide layer. This leads us to conclude that GO can be deposited using electrophoretic deposition, but that at the same time, silicon is oxidized, which may overshadow effects previously assigned to GO deposition. Published version |
| وصف الملف: | application/octet-stream; application/pdf |
| اللغة: | English |
| تدمد: | 0743-7463 3717-3723 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33df6b6cd6c2dccc06932110a9a5b6e8 https://doi.org/10.1021/acs.langmuir.8b03139 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....33df6b6cd6c2dccc06932110a9a5b6e8 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 07437463 37173723 |
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