Phase formation sequence in the Ti/InP system during thin film solid-state reactions
| العنوان: | Phase formation sequence in the Ti/InP system during thin film solid-state reactions |
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| المؤلفون: | Miklós Menyhárd, E. Ghegin, S. Favier, János L. Lábár, Philippe Rodriguez, Fabrice Nemouchi, Isabellle Sagnes |
| المساهمون: | STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), MTA EK MFA, Konkoly Thege, Hungary, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010) |
| المصدر: | Journal of Applied Physics Journal of Applied Physics, 2017, 121, pp.245311. ⟨10.1063/1.4990427⟩ Journal of Applied Physics, American Institute of Physics, 2017, 121, pp.245311. ⟨10.1063/1.4990427⟩ |
| بيانات النشر: | HAL CCSD, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | In situ, Materials science, Diffusion barrier, Diffusion, Si Photonics, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), In, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 0103 physical sciences, TiP, Thin film, Ti, 010302 applied physics, Economies of agglomeration, solid state reaction, Metallurgy, InP, 021001 nanoscience & nanotechnology, Ti2In5, Chemical engineering, chemistry, 0210 nano-technology, Layer (electronics), III-V laser, Titanium |
| الوصف: | International audience; The metallurgical properties of the Ti/InP system meet a great interest for its use as a contact in the scope of various applications such as the Si Photonics. The investigations conducted on this system highlight the initiation of a reaction between the Ti and the InP substrate during the deposition process conducted at 100 °C. The simultaneous formation of two binary phases, namely, Ti$_2$In$_5$ and TiP, is attributed to the compositional gradient induced in the InP by the wet surface preparation and enhanced by the subsequent $in situ$ Ar$^+$ preclean. Once formed, the TiP layer acts as a diffusion barrier inhibiting further reaction up to 450 °C in spite of the presence of an important Ti reservoir. At higher temperature, however, i.e., from 550 °C, the reaction is enabled either by the enhancement of the species diffusion through the TiP layer or by its agglomeration. This reaction gives rise to the total consumption of the Ti$_2$In$_5$ and Ti while the TiP and In phases are promoted. |
| اللغة: | English |
| تدمد: | 0021-8979 1089-7550 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40d4d353fa1884f774e6ebbb94e43043 https://cea.hal.science/cea-01559841/file/Ghegin2017.pdf |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....40d4d353fa1884f774e6ebbb94e43043 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 00218979 10897550 |
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