Profiling Photoinduced Carrier Generation in Semiconductor Microwire Arrays via Photoelectrochemical Metal Deposition
| العنوان: | Profiling Photoinduced Carrier Generation in Semiconductor Microwire Arrays via Photoelectrochemical Metal Deposition |
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| المؤلفون: | Mita Dasog, Harry A. Atwater, Nathan S. Lewis, Azhar I. Carim, Sisir Yalamanchili |
| المصدر: | Nano Letters. 16:5015-5021 |
| بيانات النشر: | American Chemical Society (ACS), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | Materials science, Silicon, Photoelectrochemistry, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 01 natural sciences, Condensed Matter::Materials Science, Plating, General Materials Science, Deposition (law), business.industry, Mechanical Engineering, Doping, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Wavelength, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business |
| الوصف: | Au was photoelectrochemically deposited onto cylindrical or tapered p-Si microwires on Si substrates to profile the photoinduced charge-carrier generation in individual wires in a photoactive semiconductor wire array. Similar experiments were repeated for otherwise identical Si microwires doped to be n-type. The metal plating profile was conformal for n-type wires, but for p-type wires was a function of distance from the substrate and was dependent on the illumination wavelength. Spatially resolved charge-carrier generation profiles were computed using full-wave electromagnetic simulations, and the localization of the deposition at the p-type wire surfaces observed experimentally correlated well with the regions of enhanced calculated carrier generation in the volumes of the microwires. This technique could potentially be extended to determine the spatially resolved carrier generation profiles in a variety of mesostructured, photoactive semiconductors. |
| وصف الملف: | application/pdf |
| تدمد: | 1530-6992 1530-6984 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43910c89e4be74556fefd4826d4a1ff2 https://doi.org/10.1021/acs.nanolett.6b01782 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....43910c89e4be74556fefd4826d4a1ff2 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 15306992 15306984 |
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