Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs
| العنوان: | Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs |
|---|---|
| المؤلفون: | Fernando L. Aguirre, Sebastian M. Pazos, Moshe Eizenberg, Roy Winter, Felix Palumbo, Igor Krylov |
| المصدر: | CONICET Digital (CONICET) Consejo Nacional de Investigaciones Científicas y Técnicas instacron:CONICET |
| بيانات النشر: | Elsevier BV, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Physics, Ciencias Físicas, HK, purl.org/becyt/ford/1.3 [https], 02 engineering and technology, Reliability, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Spatial distribution, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, purl.org/becyt/ford/1 [https], Frequency dispersion, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, III-V, 0210 nano-technology, Geomorphology, CIENCIAS NATURALES Y EXACTAS, Física de los Materiales Condensados |
| الوصف: | In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks. Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina Fil: Krylov, Igor. Technion - Israel Institute of Technology; Israel Fil: Winter, Roy. Technion - Israel Institute of Technology; Israel Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel |
| وصف الملف: | application/pdf |
| تدمد: | 0038-1101 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4adac9eb176f7b493200e5d607f98972 https://doi.org/10.1016/j.sse.2018.07.006 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....4adac9eb176f7b493200e5d607f98972 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 00381101 |
|---|