Fast behavioral modeling of organic CMOS devices for digital and analog circuit applications
| العنوان: | Fast behavioral modeling of organic CMOS devices for digital and analog circuit applications |
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| المؤلفون: | Romain Gwoziecki, Philippe Pannier, Rachid Hamani, Romain Coppard, Anis Daami, Emmanuel Bergeret, M. Guerin, Stephanie Jacob |
| المساهمون: | Aix Marseille Université (AMU), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | SPIE Photonic Devices + Applications SPIE Photonic Devices + Applications, 2011, San Diego, France. pp.81170Q, ⟨10.1117/12.892709⟩ |
| بيانات النشر: | SPIE, 2011. |
| سنة النشر: | 2011 |
| مصطلحات موضوعية: | 010302 applied physics, Digital electronics, Engineering, Analogue electronics, business.industry, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Behavioral modeling, [SPI]Engineering Sciences [physics], Current mirror, CMOS, Thin-film transistor, 0103 physical sciences, Electronic engineering, Device simulation, business, ComputingMilieux_MISCELLANEOUS, Electronic circuit |
| الوصف: | Organic thin film technologies have opened a new range of interest into the optoelectronics industry. Nevertheless the physics and devices modeling still present a lack of accuracy. In order to provide designers with the latest performances of our organic CMOS technology, we have compared the performances of a behavioral model to the public a-Si TFT model in terms of accuracy on device modeling and basic circuit simulations. Fully printed organic CMOS devices and circuits have been processed and characterized in order to validate our device models. In particular, measurements have been carried out on several digital circuits like inverters and ring oscillators. Analog circuits such as current mirrors and differential pairs have also been measured. Simulations of these circuits have been performed using the device behavioral model and the a-Si TFT one under common EDA commercial tools. We show that both kinds of models enable to reproduce the different simple CMOS circuits performances in static as well as in dynamic modes which can open the way for designing a wide range and more complex digital and analog organic applications. |
| تدمد: | 0277-786X |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51010f1228606b49a498acfcfc7533ac https://doi.org/10.1117/12.892709 |
| رقم الأكسشن: | edsair.doi.dedup.....51010f1228606b49a498acfcfc7533ac |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 0277786X |
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