Tailoring the Characteristics of a Gan(N)/Inxga1-Xn/Gan/Algan/Gan(P) Light Emitting Diode by Quantum Well Number and Indium Mole Fraction
| العنوان: | Tailoring the Characteristics of a Gan(N)/Inxga1-Xn/Gan/Algan/Gan(P) Light Emitting Diode by Quantum Well Number and Indium Mole Fraction |
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| المؤلفون: | Naceur Selmane, Ali Cheknane, Fakhereddine Khemloul, Hikmat S. Hilal, Mohammed H.S. Helal, Nilgun Baydogan |
| بيانات النشر: | Elsevier BV, 2023. |
| سنة النشر: | 2023 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52eac1ac35db8e9ac307592a3cf77e5d https://doi.org/10.2139/ssrn.4339809 |
| رقم الأكسشن: | edsair.doi.dedup.....52eac1ac35db8e9ac307592a3cf77e5d |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |